 |
||
 |
 |
|
 |
||
High Conductivity Traces
Where resistive losses in high power systems is critical, DITF can create thick conductor structures with thick Cu as the current carrying medium adjacent to the fine lines and spaces of traditional thin film. These Cu structures are most commonly capped with Ni and Au, enhancing both soldering and typical chip and wire applications.
Conductor Sheet Resistivities
Metal |
Thickness |
Sheet Rho mΩ/□ |
Cu |
.002" |
.021 |
Au |
120u" |
9-10 |
320u" |
4-5 |
| High Conductivitity Traces | ||||
Typical |
Minimal Line/Gap |
Comments |
||
Thickness |
Tolerance± |
Width |
Tolerance± |
|
.002" |
20% |
.003" |
.0003" |
Min thickness specifications are useful here where an upper thickness limit is not critical |
.0001" |
25% |
" |
" |
|
.000125" |
20% |
" |
" |
|
20µ" |
15µ" |
" |
" |
Must be isolated with NiOx dam |
1. Common uses are; seal rings, solder launches and power distribution. These structures can be utilized alongside typical fine line microwave structures such as couplers, splitters, combiners and filters.
2. High conductivity structures in conjunction with solid copper filled vias can produce an hermetic feed through. Contact the factory for typical hermiticity results.